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С. И. Власов

Работ: 23

Tashkent State University, Vuzgorodok, Tashkent, 700095, Uzbekistan

  1. Properties of Passivating Coatings Based on Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов, U. T. Turgunov

    СтатьяGlass properties and applicationsInorganic Materials2002Цитирований: 6
    ABI

  2. Effect of pressure on the electric properties of passivating coatings based on lead borosilicate glasses

    С. И. Власов, Fayzulla A. Saparov

    СтатьяMaterial Science and ThermodynamicsSurface Engineering and Applied Electrochemistry2011Цитирований: 4
    ABI

  3. Electronic density of states at the interface between silicon and lead borosilicate glass

    С. И. Власов, П. Б. Парчинский, B. A. Olmatov

    СтатьяSemiconductor materials and interfacesInorganic Materials2000Цитирований: 4
    ABI

  4. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    СтатьяZnO doping and propertiesSemiconductors2007Цитирований: 2
    ABI

  5. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

    СтатьяEngineering Technology and MethodologiesTechnical Physics Letters2009Цитирований: 2
    ABI

  6. Effect of pressure on the characteristics of Schottky barrier diodes made of overcompensated semiconductor

    С. И. Власов

    СтатьяAdvanced Materials and Semiconductor TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics2010Цитирований: 2
    ABI

  7. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяGlass properties and applicationsSemiconductors2004Цитирований: 1
    ABI

  8. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    СтатьяIndustrial Engineering and TechnologiesTechnical Physics Letters2008Цитирований: 1
    ABI

  9. Effect of the semiconductor-insulator interface on the characteristics of the metal-insulator-semiconductor structures

    С. И. Власов, Fayzulla A. Saparov, B.Kh. Kuchkarov

    СтатьяElectric Power Systems and ControlUzbekiston Fizika Zhurnali2009Цитирований: 1
    ABI

  10. Nonmonotonous capacitance-voltage characteristics in metal-glass-semiconductor structures

    С. И. Власов, Aslan Nasirov, О. О. Маматкаримов +1

    СтатьяSemiconductor materials and devicesSurface Engineering and Applied Electrochemistry2008Цитирований: 1
    ABI

  11. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2000Цитирований: 1
    ABI

  12. Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass

    П. Б. Парчинский, С. И. Власов

    СтатьяSemiconductor materials and interfacesRussian Microelectronics2001Цитирований: 1
    ABI

  13. On the nature of the mobile charge in passivating coatings based on lead-borosilicate glasses

    С. И. Власов, П. Б. Парчинский, Aslan Nasirov +1

    СтатьяSurface Roughness and Optical MeasurementsTechnical Physics1999Цитирований: 0
    ABI

  14. The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures

    П. Б. Парчинский, С. И. Власов, Р. А. Муминов +2

    СтатьяEngineering Technology and MethodologiesTechnical Physics Letters2000Цитирований: 0
    ABI

  15. Slowly relaxing charge in lead borosilicate glass passive coatings studied by isothermal capacitance relaxation

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2001Цитирований: 0
    ABI

  16. The effect of ultrasonic treatment on the generation characteristics of a Si-SiO2 interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 0
    ABI

  17. Properties of silicon doped by gadolinium and samarium during growth

    Muratali Bazarbaev, С. И. Власов, D.E. Nazirov

    СтатьяSilicon and Solar Cell Technologies2004Цитирований: 0
    ABI

  18. Effect of pressure on the properties of a silicon-glass interface

    С. И. Власов, M. A. Ergasheva, T. P. Adylov

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters2005Цитирований: 0
    ABI

  19. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2006Цитирований: 0
    ABI

  20. The rate of surface generation of charge carriers at the semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov

    СтатьяSurface Roughness and Optical MeasurementsSurface Engineering and Applied Electrochemistry2008Цитирований: 0
    ABI

  21. To study the interface semiconductor-dielectrics centres effect on the state density

    B. Kh. Qochqorov, M. Ehrgasheva, Н. Р. Рахимов +1

    СтатьяSurface and Thin Film Phenomena2010Цитирований: 0
    ABI

  22. Influence Of Pressure On Creation Macroadenomas Inclusions Of Surface Of Metal-Glass-Semiconductor Structures

    С. И. Власов, О. О. Маматкаримов, A. V. Ovsyannikov +1

    СтатьяNanotechnology research and applications2010Цитирований: 0
    ABI

  23. Studying influence of titanium and hafnium atoms on characteristics of volume and Si-SiO 2 interface of multilayer structures

    С. И. Власов, Sh.S. Daliev

    СтатьяAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali2011Цитирований: 0
    ABI