The effect of ultrasound on the parameters of metal-dielectric-semiconductor structures
П. Б. ПарчинскийStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanС. И. ВласовStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanР. А. МуминовStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanKh. Kh. IsmailovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanU. T. TurgunovStarodubtsev Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Data on the effect of ultrasound on the metal-oxide-semiconductor structures preliminary irradiated by γ-quanta are presented. It is demonstrated that the ultrasonic action results in a decrease of the radiation-induced charge in the dielectric layer of the structures under study. The observed effects are explained using a mechanism of the ultrasound-stimulated diffusion of radiation defects in the field of elastic stresses in the layer of silicon dioxide.
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