Sh.S. Daliev

Работ: 2

Institute of Applied Physics, National University of Uzbekistan, Tashkent, Uzbekistan

1. Influence of thermal treatment on characteristics of silicon doped by lanthanium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

   СтатьяSemiconductor materials and interfacesUzbekiston Fizika Zhurnali2006Цитирований: 0

   ABIABI:AkademIndex/openalex/2006.article.000426

2. Studying influence of titanium and hafnium atoms on characteristics of volume and Si-SiO 2 interface of multilayer structures

   С. И. Власов, Sh.S. Daliev

   СтатьяAdvanced Materials Characterization TechniquesUzbekiston Fizika Zhurnali2011Цитирований: 0

   ABIABI:AkademIndex/openalex/2011.article.000538