Effect of pressure on the properties of a silicon-glass interface
С. И. ВласовNational University of Uzbekistan, Tashkent, UzbekistanM. A. ErgashevaNational University of Uzbekistan, Tashkent, UzbekistanT. P. AdylovNational University of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
The effect of hydrostatic pressure on the energy distribution of surface states localized at the boundary between silicon (Si) and a lead borosilicate glass (PbO-SiO2-B2O3-Al2O3-Ta2O5) has been studied. At a pressure of 8 kbar, donor centers are formed in a layer of glass adjacent to the silicon-glass interface, which are capable of participating in electron exchange with the semiconductor.
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