Article

Effect of pressure on the properties of a silicon-glass interface

С. И. ВласовNational University of Uzbekistan, Tashkent, UzbekistanM. A. ErgashevaNational University of Uzbekistan, Tashkent, UzbekistanT. P. AdylovNational University of Uzbekistan, Tashkent, Uzbekistan

Technical Physics Lettersjournal2005en

ABI

Abstract

The effect of hydrostatic pressure on the energy distribution of surface states localized at the boundary between silicon (Si) and a lead borosilicate glass (PbO-SiO2-B2O3-Al2O3-Ta2O5) has been studied. At a pressure of 8 kbar, donor centers are formed in a layer of glass adjacent to the silicon-glass interface, which are capable of participating in electron exchange with the semiconductor.

Topics

Semiconductor Quantum Structures and Devices Silicon Nanostructures and Photoluminescence Semiconductor materials and interfaces

Identifiers

DOI: 10.1134/1.1931794

Citations and references

Cited by 05 references

Metrics — AkademScholar · Coming soon