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B. N. Zaveryukhin

Работ: 16

Physical Engineering Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan

  1. Variation of the reflection coefficient of semiconductors in a wavelength range from 0.2 to 20 μm under the action of ultrasonic waves

    B. N. Zaveryukhin, N. N. Zaveryukhina, Oybek Tursunkulov

    СтатьяMaterial Properties and ApplicationsTechnical Physics Letters2002Цитирований: 5
    ABI

  2. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal2012Цитирований: 4
    ABI

  3. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2014Цитирований: 3
    ABI

  4. Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

    С. И. Власов, A. V. Ovsyannikov, B. N. Zaveryukhin

    СтатьяEngineering Technology and MethodologiesTechnical Physics Letters2009Цитирований: 2
    ABI

  5. Acoustostimulated expansion of the short-wavelength sensitivity range of AlGaAs/GaAs Solar cells

    E. B. Zaveryukhina, N. N. Zaveryukhina, L. N. Lezilova +3

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2005Цитирований: 2
    ABI

  6. Alternating-strain-induced drift of nonequilibrium charge carriers in GaAs photodetectors

    B. N. Zaveryukhin, N. N. Zaveryukhina, Р. А. Муминов +1

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters2002Цитирований: 1
    ABI

  7. Development of thermoelectric detectors on the basis of higher manganese silicide (HMS) films

    T. S. Kamilov, A.A. Uzokov, D.K. Kabilov +5

    СтатьяAdvanced Thermoelectric Materials and Devices2004Цитирований: 1
    ABI

  8. Acoustostimulated change in the optical absorption coefficient of gallium arsenide in the 0.81–1.77 μm wavelength range

    N. N. Zaveryukhina, E. B. Zaveryukhina, B. N. Zaveryukhin

    СтатьяThermography and Photoacoustic TechniquesTechnical Physics Letters2007Цитирований: 1
    ABI

  9. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    СтатьяIndustrial Engineering and TechnologiesTechnical Physics Letters2008Цитирований: 1
    ABI

  10. The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates

    Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
    ABI

  11. Li-drifted Si detectors for charged particle spectrometry in a wide energy range

    B.B. Bajzakov, B. N. Zaveryukhin, A. Sh. Iskanderov +2

    СтатьяParticle Detector Development and PerformancePribory i Tekhnika Ehksperimenta1982Цитирований: 0
    ABI

  12. Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts

    D. A. Aronov, B. N. Zaveryukhin, Р. А. Муминов +2

    СтатьяAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)1986Цитирований: 0
    ABI

  13. Cadmium telluride thin-film detectors of nuclear radiation

    B. N. Zaveryukhin, Ш. А. Мирсагатов, N. N. Zaveryukhina +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2003Цитирований: 0
    ABI

  14. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics

    Ш. А. Мирсагатов, Baiev, B. N. Zaveryukhin +1

    СтатьяAdvanced Semiconductor Detectors and Materials2010Цитирований: 0
    ABI

  15. 10.1007/s11455-008-3019-x

    B. N. Zaveryukhin, N. N. Zaveryukhina, S. I. Vlasov +1

    СтатьяHermeneutics and Narrative IdentityCrossRef Listing of Deleted DOIs2010Цитирований: 0
    ABI

  16. Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds

    Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1

    СтатьяSemiconductor materials and interfacesUkrainian Journal of Physics2013Цитирований: 0
    ABI