Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts
D. A. AronovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentB. N. ZaveryukhinS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentР. А. МуминовS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentV. V. RubinovS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, TashkentA. Sh. ShamagdievS. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent
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