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V. V. Rubinov

Работ: 7

S. T. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbeki SSR, Tashkent

  1. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 7
    ABI

  2. On the theory of carrier exclusion in “pure” intrinsic semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1981Цитирований: 5
    ABI

  3. The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1982Цитирований: 2
    ABI

  4. The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 1
    ABI

  5. The Influence of Exclusion on Light Absorption by Free Carriers in “Pure” (almost Intrinsic) Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    СтатьяSilicon Nanostructures and Photoluminescencephysica status solidi (a)1982Цитирований: 1
    ABI

  6. On the Minimum Coefficient of Light Absorption by Free Carriers under the Conditions of Exclusion in “Pure” Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1983Цитирований: 0
    ABI

  7. Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts

    D. A. Aronov, B. N. Zaveryukhin, Р. А. Муминов +2

    СтатьяAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)1986Цитирований: 0
    ABI