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D. A. Aronov

Работ: 26

S. T. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbeki SSR, Tashkent

  1. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 7
    ABI

  2. On the theory of carrier exclusion in “pure” intrinsic semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1981Цитирований: 5
    ABI

  3. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

    D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1988Цитирований: 4
    ABI

  4. On the Theory of Photoconductivity and Photoelectromagnetic Effect at High Concentrations of Non‐Equilibrium Charge Carriers

    D. A. Aronov, V. Zaitova, E. P. Kotov

    СтатьяCalibration and Measurement Techniquesphysica status solidi (b)1971Цитирований: 2
    ABI

  5. Quantum yield of current carriers excited by electron beams and electron penetration depth in thin GaP films

    S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

    СтатьяSemiconductor materials and interfacesphysica status solidi (a)1983Цитирований: 2
    ABI

  6. The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1982Цитирований: 2
    ABI

  7. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

    D. A. Aronov, R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1972Цитирований: 1
    ABI

  8. The Influence of Interband Recombination on the Photoconductivity and the Photoelectromagnetic Effect in Semiconductors with Deep Traps

    D. A. Aronov, V. Zaitova

    СтатьяSolidification and crystal growth phenomenaphysica status solidi (b)1973Цитирований: 1
    ABI

  9. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

    S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

    СтатьяSemiconductor materials and interfacesphysica status solidi (a)1982Цитирований: 1
    ABI

  10. The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films

    S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

    СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (a)1983Цитирований: 1
    ABI

  11. The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 1
    ABI

  12. The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors

    D. A. Aronov, B. R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 1
    ABI

  13. The Influence of Exclusion on Light Absorption by Free Carriers in “Pure” (almost Intrinsic) Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    СтатьяSilicon Nanostructures and Photoluminescencephysica status solidi (a)1982Цитирований: 1
    ABI

  14. Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels

    D. A. Aronov, Ya. P. Kotov

    ГлаваSilicon and Solar Cell Technologies1971Цитирований: 0
    ABI

  15. On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)

    D. A. Aronov, R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1973Цитирований: 0
    ABI

  16. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

    D. A. Aronov, E. P. Kotov, Ya. P. Kotov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1975Цитирований: 0
    ABI

  17. The Influence of Surface Recombination on the Photoelectromagnetic (PEM) Effect in Semiconductors with Deep Traps

    D. A. Aronov, V. Zaitova

    СтатьяSurface and Thin Film Phenomenaphysica status solidi (b)1981Цитирований: 0
    ABI

  18. On the Minimum Coefficient of Light Absorption by Free Carriers under the Conditions of Exclusion in “Pure” Semiconductors with Non-Injecting Contacts

    D. A. Aronov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1983Цитирований: 0
    ABI

  19. The Capacitance and Characteristic Relaxation Times at Carrier Exclusion in Compensated Semiconductors with Deep Traps and Non-Injecting Contacts

    D. A. Aronov, B. R. Mamatkulov

    СтатьяAdvanced Research in Systems and Signal Processingphysica status solidi (a)1984Цитирований: 0
    ABI

  20. On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons

    S. A. Azimov, D. A. Aronov, V. M. Rubinov +1

    СтатьяSurface and Thin Film Phenomenaphysica status solidi (a)1984Цитирований: 0
    ABI

  21. Use of the strong exclusion effect in ionizing radiationdetectors based on “pure” semiconductors with non-injecting contacts

    D. A. Aronov, B. N. Zaveryukhin, Р. А. Муминов +2

    СтатьяAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)1986Цитирований: 0
    ABI

  22. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

    D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

    СтатьяSemiconductor materials and interfacesphysica status solidi (a)1986Цитирований: 0
    ABI

  23. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

    D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 0
    ABI

  24. The Influence of Field-Induced Variation in Majority Carrier Lifetime Caused by Photostimulated Heating on Impurity Photoconductivity of Compensated Semiconductors with Exclusion

    D. A. Aronov, B. R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1987Цитирований: 0
    ABI

  25. The influence of diffusion on the carrier exclusion effect in high-purity (intrinsic) semiconductors with non-injecting contacts

    D. A. Aronov, B. R. Mamatkulov, R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1989Цитирований: 0
    ABI