Yu. M. Yuabov

Работ: 6

S. V. Starodubtsev Physico‐Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

1. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1988Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.244481

2. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

   S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1982Цитирований: 1

   ABIABI:AkademIndex/openalex/1982.article.000074

3. Investigation of n-CdSp-CdTe Thin Film Heterojunctions

   E. I. Adieovich, Yu. M. Yuabov, G. R. Yagudaev

   СтатьяAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)1971Цитирований: 0

   ABIABI:AkademIndex/openalex/1971.article.000009

4. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1986Цитирований: 0

   ABIABI:AkademIndex/openalex/1986.article.000099

5. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 0

   ABIABI:AkademIndex/openalex/1986.article.000143

6. The photoelectric characteristics of solar p–i–n photocells based on hydrogenated amorphous silicon with built-in electric field homogeneous in the i-layer thickness

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   СтатьяThin-Film Transistor Technologiesphysica status solidi (a)1990Цитирований: 0

   ABIABI:AkademIndex/openalex/1990.article.000081