D. K. Isamukhamedova

Работ: 4

S. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

1. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

   S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1982Цитирований: 1

   ABIABI:AkademIndex/openalex/1982.article.000074

2. On the properties of amorphous silicon films and amorphous Si-crystalline si heterojunction

   S. A. Azimov, D. K. Isamukhamedova, P. M. Karageorgy‐Alkalaev +2

   СтатьяMaterial Science and Thermodynamicsphysica status solidi (a)1985Цитирований: 0

   ABIABI:AkademIndex/openalex/1985.article.000107

3. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   СтатьяSemiconductor materials and interfacesphysica status solidi (a)1986Цитирований: 0

   ABIABI:AkademIndex/openalex/1986.article.000099

4. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 0

   ABIABI:AkademIndex/openalex/1986.article.000143