D. K. Isamukhamedova

4 ta ish

S. V. Starodubtsev Physico-Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

1. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

   S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

   MaqolaSemiconductor materials and interfacesphysica status solidi (a)19821 iqtibos

   ABIABI:AkademIndex/openalex/1982.article.000074

2. On the properties of amorphous silicon films and amorphous Si-crystalline si heterojunction

   S. A. Azimov, D. K. Isamukhamedova, P. M. Karageorgy‐Alkalaev +2

   MaqolaMaterial Science and Thermodynamicsphysica status solidi (a)19850 iqtibos

   ABIABI:AkademIndex/openalex/1985.article.000107

3. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   MaqolaSemiconductor materials and interfacesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/openalex/1986.article.000099

4. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/openalex/1986.article.000143