Yu. M. Yuabov

6 ta ish

S. V. Starodubtsev Physico‐Technical Institute, Academy of Sciences of the Uzbek SSR, Tashkent

1. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19884 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.244481

2. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

   S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

   MaqolaSemiconductor materials and interfacesphysica status solidi (a)19821 iqtibos

   ABIABI:AkademIndex/openalex/1982.article.000074

3. Investigation of n-CdSp-CdTe Thin Film Heterojunctions

   E. I. Adieovich, Yu. M. Yuabov, G. R. Yagudaev

   MaqolaAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)19710 iqtibos

   ABIABI:AkademIndex/openalex/1971.article.000009

4. The influence of inversion layer on the characteristics of the contact-adjoining layer in solar-cell silicon Schottky MTIS structures

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   MaqolaSemiconductor materials and interfacesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/openalex/1986.article.000099

5. On the Theory of Majority-Carrier Silicon Solar-Cell MTIS Structures with a Schottky Barrier

   D. A. Aronov, D. K. Isamukhamedova, Yu. M. Yuabov

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19860 iqtibos

   ABIABI:AkademIndex/openalex/1986.article.000143

6. The photoelectric characteristics of solar p–i–n photocells based on hydrogenated amorphous silicon with built-in electric field homogeneous in the i-layer thickness

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   MaqolaThin-Film Transistor Technologiesphysica status solidi (a)19900 iqtibos

   ABIABI:AkademIndex/openalex/1990.article.000081