On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

Calculations are given related to the transient process of the reverse-resistance recovery after reversal of a p–i–n diode current from forward to reverse direction. The calculations have been performed for high-level forward injection with junction injection coefficients not equal to unity and considering the expansion of space-charge regions in pulling excess carriers out of the i-layer and heavily doped regions under the action of large reverse currents. By using Fourier series methods for the first (quasi-neutral) stage of the transient process, a general expression has been found for the carrier concentration distribution in the i-region. [Russian text ignored].

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