The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates
Б. СапаевPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanА. С. СаидовPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanB. N. ZaveryukhinPhysicotechnical Institute, “Solar Physics” Research and Production Corporation, Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Epitaxial layers of (Si2)1−x (GaAs)x (0≤x≤0.85) solid solutions were grown by liquid phase epitaxy in a temperature interval from 850 to 700°C from a tin-based solution melt confined between two horizontal polycrystalline silicon substrates. The dependence of the quality and parameters of the epilayers on the process conditions have been studied. The obtained Si-(Si2)1−x (GaAs)x structures can be used in various microelectronic and photoconversion devices, replacing analogous but more expensive GaAs-based structures. Experimental data on the electrical properties and photoelectric characteristics of the Si-(Si2)1−x (GaAs)x structures are presented.
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