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А.С. Ачилов

Работ: 7

Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2B, Tashkent, 700084, Uzbekistan

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    СтатьяChalcogenide Semiconductor Thin FilmsModern Physics Letters B2023Цитирований: 4
    ABI

  3. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal2012Цитирований: 4
    ABI

  4. Gamma irradiation effect on nCdS/pCd heterostructure

    S. A. Muzafarova, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and Materials2008Цитирований: 0
    ABI

  5. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics

    Ш. А. Мирсагатов, Baiev, B. N. Zaveryukhin +1

    СтатьяAdvanced Semiconductor Detectors and Materials2010Цитирований: 0
    ABI

  6. Research of the real structure of the diode with barrier Schottky Al-pCdTe

    Ш. А. Мирсагатов, S. A. Muzafarova, Baiev +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali2010Цитирований: 0
    ABI

  7. The photosensitive structure CdTe/TeO 2 /CdO on the basis of CdTe film and thin oxide layer CdO synthesized by a magnetron-ionic dispersion method

    S. A. Muzafarova, Ш. А. Мирсагатов, Makhmudov +1

    СтатьяChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali2011Цитирований: 0
    ABI