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А.С. Ачилов

7 ta ish

Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2B, Tashkent, 700084, Uzbekistan

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    MaqolaAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 iqtibos
    ABI

  2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    MaqolaChalcogenide Semiconductor Thin FilmsModern Physics Letters B20234 iqtibos
    ABI

  3. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 iqtibos
    ABI

  4. Gamma irradiation effect on nCdS/pCd heterostructure

    S. A. Muzafarova, А.С. Ачилов

    MaqolaAdvanced Semiconductor Detectors and Materials20080 iqtibos
    ABI

  5. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics

    Ш. А. Мирсагатов, Baiev, B. N. Zaveryukhin +1

    MaqolaAdvanced Semiconductor Detectors and Materials20100 iqtibos
    ABI

  6. Research of the real structure of the diode with barrier Schottky Al-pCdTe

    Ш. А. Мирсагатов, S. A. Muzafarova, Baiev +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20100 iqtibos
    ABI

  7. The photosensitive structure CdTe/TeO 2 /CdO on the basis of CdTe film and thin oxide layer CdO synthesized by a magnetron-ionic dispersion method

    S. A. Muzafarova, Ш. А. Мирсагатов, Makhmudov +1

    MaqolaChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20110 iqtibos
    ABI