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А.С. Ачилов

7 та иш

Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2B, Tashkent, 700084, Uzbekistan

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 иқтибос
    ABI

  2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS<sub><i>x</i></sub>Te1−x/<i>p</i>-CdTe heterostructure

    А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

    МақолаChalcogenide Semiconductor Thin FilmsModern Physics Letters B20234 иқтибос
    ABI

  3. Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures

    Ш. А. Мирсагатов, А.С. Ачилов, B. N. Zaveryukhin +1

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal20124 иқтибос
    ABI

  4. Gamma irradiation effect on nCdS/pCd heterostructure

    S. A. Muzafarova, А.С. Ачилов

    МақолаAdvanced Semiconductor Detectors and Materials20080 иқтибос
    ABI

  5. The new detectors with Schottky barrier on the base of cadmium telluride and their some characteristics

    Ш. А. Мирсагатов, Baiev, B. N. Zaveryukhin +1

    МақолаAdvanced Semiconductor Detectors and Materials20100 иқтибос
    ABI

  6. Research of the real structure of the diode with barrier Schottky Al-pCdTe

    Ш. А. Мирсагатов, S. A. Muzafarova, Baiev +1

    МақолаAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20100 иқтибос
    ABI

  7. The photosensitive structure CdTe/TeO 2 /CdO on the basis of CdTe film and thin oxide layer CdO synthesized by a magnetron-ionic dispersion method

    S. A. Muzafarova, Ш. А. Мирсагатов, Makhmudov +1

    МақолаChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20110 иқтибос
    ABI