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Uzbekiston Fizika Zhurnali

81 та иш

Журнал

  1. Magnetic properties of intermetallic REM-TM systems at high temperatures

    O. K. Kuvandikov, H. O. Shakarov, М. К. Салахитдинова

    МақолаIntermetallics and Advanced Alloy PropertiesUzbekiston Fizika Zhurnali20011 иқтибос
    ABI

  2. Effect of the semiconductor-insulator interface on the characteristics of the metal-insulator-semiconductor structures

    С. И. Власов, Fayzulla A. Saparov, B.Kh. Kuchkarov

    МақолаElectric Power Systems and ControlUzbekiston Fizika Zhurnali20091 иқтибос
    ABI

  3. Effect of Cr"4"+ impurities in Nd:Cr:GSGG and Nd:Cr:YAG laser materials on parameters of lasers at solar pumping

    Sh. Payziyev, С. А. Бахрамов, F. Shayimov +1

    МақолаSolid State Laser TechnologiesUzbekiston Fizika Zhurnali20151 иқтибос
    ABI

  4. Probabilities of many-body decays of fermions

    K. R. Nasriddinov, N.A. Sarikov

    МақолаQuantum Chromodynamics and Particle InteractionsUzbekiston Fizika Zhurnali19920 иқтибос
    ABI

  5. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    МақолаIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 иқтибос
    ABI

  6. Electric field gradient tensor parameters at REM sites of RBa 2 Cu 5 O 7 lattices determined by emission Moessbauer spectroscopy with Ga-67 (Zn-67) isotopes

    N.Yu. Turaev, Z.Yu. Turaev, Sagatov +2

    МақолаPhysics of Superconductivity and MagnetismUzbekiston Fizika Zhurnali19950 иқтибос
    ABI

  7. Multifragmentation of carbon nucleus of momentum 4,2 GeV/c per nucleon from inelastic collisions with propanum and tantalum nuclei. 3. Evolution of impulse characteristics of fragments in rest frame of fragmenting nucleus

    A. I. Bondarenko, D.A. Karshiev, G.M. Chernov +1

    МақолаLaser-induced spectroscopy and plasmaUzbekiston Fizika Zhurnali19960 иқтибос
    ABI

  8. Copper surrounding in Y 1-x Ca x Ba 2-y La y Cu 3 O 6+z

    U. Abdurakhmanov, Sagatov, П. П. Серегин

    МақолаAdvanced Condensed Matter PhysicsUzbekiston Fizika Zhurnali19960 иқтибос
    ABI

  9. Influence of target density on a formation of multiply charged HoO and YO ions of laser plasma

    M.R. Bedilov, R. T. Khaidarov, B.Kh. Yakubov +1

    МақолаLaser-induced spectroscopy and plasmaUzbekiston Fizika Zhurnali19970 иқтибос
    ABI

  10. Carrier-removal rates under the action of gamma radiation in n-type compensated silicon

    Yunusov, M. Kаrimov, Zhalelov

    МақолаSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali19970 иқтибос
    ABI

  11. Influence of Frenkel's effect on the non-ideality coefficient of p-n junction in microwave field

    G. Gulyamov, М. Г. Дадамирзаев

    МақолаSemiconductor Quantum Structures and DevicesUzbekiston Fizika Zhurnali19980 иқтибос
    ABI

  12. Structure and composition of admixture precipitates of nickel in silicon

    S.Z. Zajnabidinov, N. A. Turgunov, Alisher Baxadirov

    МақолаMaterial Properties and ApplicationsUzbekiston Fizika Zhurnali20000 иқтибос
    ABI

  13. Modification of structure and properties of semiconductor surface by ion implantation with active metals

    А.С. Рысбаев, Sh.H. Djuraev, A.M. Rahimov +2

    МақолаMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20000 иқтибос
    ABI

  14. Degradation processes in photosensitive structures on the basis of big-blocked p-CdTe polycrystals

    Ш. А. Мирсагатов, A.I. Sultanov, Makhmudov +2

    МақолаAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20010 иқтибос
    ABI

  15. Functional possibilities of photo receivers with controllable spectrum

    Ш. А. Мирсагатов, B. U. Aĭtbaev, Makhmudov +1

    МақолаInfrared Target Detection MethodologiesUzbekiston Fizika Zhurnali20010 иқтибос
    ABI

  16. Anomalous changing the magnetic properties of compounds of yttrium with [Nd, Gd]Al 3 (BO 3 ) 4 at high temperatures

    O.K. Kuvandykov, Kh. O. Shakarov, Z. M. Shodiev

    МақолаCrystal Structures and PropertiesUzbekiston Fizika Zhurnali20020 иқтибос
    ABI

  17. Application of low-energy ion-implantation for creation of nano films on the surface of dielectric films CaF 2

    Д. А. Ташмухамедова

    МақолаMetal and Thin Film MechanicsUzbekiston Fizika Zhurnali20040 иқтибос
    ABI

  18. Some physical properties of cotton fibers doped by iodine

    A. T. Mamadalimov, B.Eh. Turaev, T. A. Usmanov

    МақолаTextile materials and evaluationsUzbekiston Fizika Zhurnali20040 иқтибос
    ABI

  19. Studying magnetic properties of La 0.8 Ag x MnO 3 manganates at high temperatures

    O.K. Kuvandykov, Kh. O. Shakarov, Z. M. Shodiev

    МақолаMagnetic and transport properties of perovskites and related materialsUzbekiston Fizika Zhurnali20050 иқтибос
    ABI

  20. Effect of grain boundaries on a conductivity and current transport in A I I-B V l films

    T.M. Razykov, Smagul Karazhanov, A. Yu. Leĭderman +2

    МақолаSemiconductor materials and devicesUzbekiston Fizika Zhurnali20050 иқтибос
    ABI

  21. Influence of thermal treatment on characteristics of silicon doped by lanthanium

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20060 иқтибос
    ABI

  22. The photoluminescence of p-CdTe columnar films

    Kh. Kh. Ismoilov, A. M. Abdugafurov, С. Х. Шамирзаев +2

    МақолаAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20070 иқтибос
    ABI

  23. Application of ion implantation for obtaining the nanofilms of metal silicides

    Б. Е. Умирзаков, Д. А. Ташмухамедова, B.A. Kadyrov

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20080 иқтибос
    ABI

  24. Some peculiarities of current-voltage characteristics of nCdS-pCdTe-heterostructures with intermediate layer of d ≅ 1 μ m

    S. A. Muzafarova, Ш. А. Мирсагатов, A. Yu. Leĭderman +2

    МақолаChalcogenide Semiconductor Thin FilmsUzbekiston Fizika Zhurnali20090 иқтибос
    ABI

  25. Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature

    G. Gulyamov, И. Н. Каримов, N. Yu. Sharibaev +1

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 иқтибос
    ABI