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Kh.S. Daliev

26 та иш

Institute of Applied Physics Research, National University of Uzbekistan, Tashkent, Uzbekistan

  1. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20069 иқтибос
    ABI

  2. Raman spectroscopy of silicon, doped with platinum and irradiated by protons

    Sharifa B. Utamuradova, Kh.S. Daliev, А. В. Станчик +1

    МақолаSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20239 иқтибос
    ABI

  3. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 иқтибос
    ABI

  4. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20018 иқтибос
    ABI

  5. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    МақолаSilicon and Solar Cell TechnologiesModern Physics Letters B19974 иқтибос
    ABI

  6. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20243 иқтибос
    ABI

  7. Defect Structure of Silicon Doped with Erbium

    Sharifa B. Utamuradova, Kh.S. Daliev, Alisher Khaitbaev +3

    МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20243 иқтибос
    ABI

  8. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 иқтибос
    ABI

  9. Properties of Single Crystal Silicon Doped with Vanadium

    Kh.S. Daliev, Zafarjon M. Khusanov

    МақолаChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 иқтибос
    ABI

  10. Influence of the Temperature and Cyclic Deformations of (BixSb1–x)2Te3 Films on Their Resistance

    Kh.S. Daliev, M. M. Ahmedov, M. K. Onarkulov

    МақолаAdvanced Thermoelectric Materials and DevicesJournal of Engineering Physics and Thermophysics20211 иқтибос
    ABI

  11. Technology of fabrication of CdS<sub>x</sub>Te<sub>1-x</sub> solid solution on silicon substrate

    I.B. Sapaev, S. Sadullaev, D. Babajanov +5

    МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20231 иқтибос
    ABI

  12. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

    I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20231 иқтибос
    ABI

  13. Study of a solar cell with a silicon-based photodiode structure

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20241 иқтибос
    ABI

  14. Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au

    Sharifa B. Utamuradova, Kh.S. Daliev, Shakhrukh Kh. Daliev +3

    МақолаChalcogenide Semiconductor Thin FilmsEast European Journal of Physics20241 иқтибос
    ABI

  15. Main properties of silicides of the Mo - Si system

    Sharifa B. Utamuradova, Kh.S. Daliev, S. A. Muzafarova +2

    МақолаIntermetallics and Advanced Alloy PropertiesE3S Web of Conferences20231 иқтибос
    ABI

  16. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    МақолаIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 иқтибос
    ABI

  17. Silicon doped by rare earth elements - prospective material of microelectronics

    Kh.S. Daliev, S.Z. Zajnabidinov

    МақолаSemiconductor materials and interfaces19950 иқтибос
    ABI

  18. The capacitance and IR-spectroscopy of defects in silicon and silicon structures

    S.Z. Zajnabidinov, Kh.S. Daliev

    МақолаThermography and Photoacoustic Techniques19950 иқтибос
    ABI

  19. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    МақолаSemiconductor materials and devicesTechnical Physics19970 иқтибос
    ABI

  20. Capacitance transient spectroscopy of radiation defects on the interface Si-SiO 2 of silcon MIS-structures

    Shakhrukh Kh. Daliev, Sharifa B. Utamuradova, Kh.S. Daliev

    МақолаSilicon and Solar Cell Technologies20040 иқтибос
    ABI

  21. Investigation of properties of silicon doped titanium and interaction of titanium atoms with other impurities

    Kh.S. Daliev

    МақолаIntermetallics and Advanced Alloy Properties20040 иқтибос
    ABI

  22. Europium effect on the property of metal insulator silicon (MIS) structures

    Kh.S. Daliev

    МақолаSemiconductor materials and devices20050 иқтибос
    ABI

  23. Transient capacitance spectroscopy of silicon MIS-structures with an impurity of vanadium

    Kh.S. Daliev

    МақолаSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20170 иқтибос
    ABI

  24. Interaction of vanadium atoms with different states of oxygen in silicon

    Kh.S. Daliev

    МақолаSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali20170 иқтибос
    ABI

  25. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

    Kh.S. Daliev, Anifa Paluanova

    МақолаAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists20210 иқтибос
    ABI