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А. Yusupov

28 та иш

Tashkent University of Information technologies, Tashkent, Uzbekistan

  1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    ПрепринтAdvancements in Semiconductor Devices and Circuit Design20216 иқтибос
    ABI

  2. Increasing Die Durability in Cold Stamping by Quenching with Intermediate Tempering

    D. M. Berdiev, А. Yusupov, R. K. Toshmatov +1

    МақолаMetallurgy and Material FormingRussian Engineering Research20226 иқтибос
    ABI

  3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  4. Experimental Assessment of the Nonuniform Radiation-Induced Space-Charge Distribution in the Surface Region of Silicon

    A. É. Atamuratov, А. Yusupov, Khidir A. Adinaev

    МақолаAdvanced Energy Technologies and Civil Engineering InnovationsInorganic Materials20015 иқтибос
    ABI

  5. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

    МақолаAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20215 иқтибос
    ABI

  6. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI

  7. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    МақолаSemiconductor materials and devicesResults in Physics20183 иқтибос
    ABI

  8. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    МақолаSemiconductor materials and devicesTechnical Physics20193 иқтибос
    ABI

  9. The effect of geometrical sizes on efficiency of vertical silicon tunnel junction solar cell for high solar concentration

    A. É. Atamuratov, B.Q. Jumaboyev, А. Yusupov +2

    МақолаSilicon and Solar Cell Technologies20222 иқтибос
    ABI

  10. The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET

    A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2

    МақолаGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 иқтибос
    ABI

  11. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 иқтибос
    ABI

  12. Some electrical and photoelectric characteristics that are promising for photoconverters p-Cu2ZnSnS4/n-Si heterostructures

    А. Yusupov, К. Адамбаев, Zafar Turaev

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20151 иқтибос
    ABI

  13. Analyzing metal forming process

    D.M. Berdiyev, А. Yusupov, B.K. Abdulayev

    МақолаLaser and Thermal Forming TechniquesACADEMICIA An International Multidisciplinary Research Journal20211 иқтибос
    ABI

  14. Analysis of common errors and methods of calibration of ultrasonic level meter

    А. Yusupov, U. K. Sabirov, M. Sh. Begijonov +1

    МақолаFlow Measurement and AnalysisE3S Web of Conferences20231 иқтибос
    ABI

  15. The Effect of Height on the Efficiency of Vertical Silicon Tunnel Junction Solar Cell for High Solar Concentration

    A. É. Atamuratov, B.Q. Jumaboyev, A.E. Abdikarimov +2

    Мақолаsolar cell performance optimization20231 иқтибос
    ABI

  16. Improving the Wear Resistance of High-Precision Dies

    D. M. Berdiev, А. Yusupov, M. A. Uмаrоvа +1

    МақолаMetal Alloys Wear and PropertiesRussian Engineering Research20241 иқтибос
    ABI

  17. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    МақолаAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 иқтибос
    ABI

  18. Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions

    А. Yusupov, К. Адамбаев, Zafar Turaev +2

    МақолаChalcogenide Semiconductor Thin FilmsTechnical Physics Letters20171 иқтибос
    ABI

  19. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    МақолаSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 иқтибос
    ABI

  20. Photoelectric Properties of MnSi Films

    К. Адамбаев, А. Yusupov, Komiljon Yakubov

    МақолаSemiconductor materials and interfacesInorganic Materials20011 иқтибос
    ABI

  21. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    МақолаSemiconductor materials and devicesTechnical Physics19970 иқтибос
    ABI

  22. Paramagnetic and thermostimulated centers in YAG and CsBr-In crystals

    A.N. Salakhitdinov, А. Yusupov

    МақолаSolid State Laser Technologies19990 иқтибос
    ABI

  23. Formation of Manganese Silicide Films on Silicon

    К. Адамбаев, А. Yusupov, Komiljon Yakubov

    МақолаSemiconductor materials and interfacesInorganic Materials20030 иқтибос
    ABI

  24. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

    I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

    МақолаSilicon Effects in AgricultureComputational Materials Science20080 иқтибос
    ABI

  25. Self heating and DIBL effects in 2D MoS2 based MOSFET with different gate oxide and back oxide materials

    A. É. Atamuratov, X. Sh. Saparov, Jean Chamberlain Chedjou +2

    Мақола2D Materials and Applications20220 иқтибос
    ABI