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I. G. Atabaev

25 та иш

Institute of Materials Science, NPO Physics-Sun, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

  1. High-strength glass-ceramic materials synthesized in a large solar furnace

    I. G. Atabaev, Sh. A. Faiziev, M. S. Paizullakhanov +2

    МақолаMaterial Science and ThermodynamicsApplied Solar Energy20156 иқтибос
    ABI

  2. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    МақолаSilicon and Solar Cell TechnologiesThin Solid Films20105 иқтибос
    ABI

  3. Influence of Defects on Low Temperature Diffusion of Boron in SiC

    I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 иқтибос
    ABI

  4. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 иқтибос
    ABI

  5. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос
    ABI

  6. Growth of transparent electrical conducting films of indium and tin oxides by chemical vapor deposition

    I. G. Atabaev, M. U. Hajiev, V. A. Pak +2

    МақолаTransition Metal Oxide NanomaterialsApplied Solar Energy20164 иқтибос
    ABI

  7. The effects of the solar radiant flux density on the properties of pyroceramic materials

    T. T. Riskiev, M. S. Paizullakhanov, I. G. Atabaev +2

    МақолаEnvironmental and Sediment ControlApplied Solar Energy20144 иқтибос
    ABI

  8. Modernization of an automated controlling system for heliostat field of big solar furnace

    I. G. Atabaev, J. S. Akhatov, Э. Д. Мухамедиев +1

    МақолаPhotovoltaic System Optimization TechniquesApplied Solar Energy20164 иқтибос
    ABI

  9. Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

    I. G. Atabaev

    МақолаSemiconductor materials and interfacesComputational Materials Science20013 иқтибос
    ABI

  10. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 иқтибос
    ABI

  11. Correlation between the structure, specific resistance, and optical properties of ITO films grown by CVD

    I. G. Atabaev, M. U. Khazhiev, S. B. Zakirova +1

    МақолаZnO doping and propertiesApplied Solar Energy20172 иқтибос
    ABI

  12. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    МақолаSemiconductor materials and interfacesInorganic Materials20051 иқтибос
    ABI

  13. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 иқтибос
    ABI

  14. Growth and properties of single crystals of Si1 − x Ge x (0 &lt; x &lt; 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 иқтибос
    ABI

  15. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

    I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

    МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос
    ABI

  16. Low-temperature diffusion of lithium in silicon-germanium solid solutions

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov

    МақолаSemiconductor materials and interfacesPhysics of the Solid State20011 иқтибос
    ABI

  17. Structure Formation in the System TiO2–BaCO3 in Concentrated Solar Radiation

    I. G. Atabaev, Sh. A. Faiziev, M. S. Paizullakhanov

    МақолаPigment Synthesis and PropertiesGlass and Ceramics20161 иқтибос
    ABI

  18. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

    Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

    МақолаSilicon Carbide Semiconductor TechnologiesSemiconductors20010 иқтибос
    ABI

  19. On the possibility of determining the diffusion length of excitons in semiconductors from photomagnetic measurement data

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20050 иқтибос
    ABI

  20. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 иқтибос
    ABI

  21. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    МақолаSemiconductor materials and interfacesInorganic Materials20080 иқтибос
    ABI

  22. Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

    I. G. Atabaev, N. A. Matchanov, А. Yusupov +2

    МақолаSilicon Effects in AgricultureComputational Materials Science20080 иқтибос
    ABI

  23. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

    МақолаSemiconductor materials and devicesSemiconductors20100 иқтибос
    ABI

  24. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    МақолаSemiconductor materials and interfacesSemiconductors20100 иқтибос
    ABI

  25. Change in characteristics of the band structure of oxide materials at high temperatures

    I. G. Atabaev, M. S. Paizullakhanov, Sh. R. Nurmatov

    МақолаSemiconductor materials and devicesHigh Temperature20160 иқтибос
    ABI