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É. N. Bakhranov

6 та иш

Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent, Uzbekistan

  1. Oxide film assisted dopant diffusion in silicon carbide

    Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

    МақолаSilicon and Solar Cell TechnologiesThin Solid Films20105 иқтибос
    ABI

  2. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 иқтибос
    ABI

  3. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    МақолаSemiconductor materials and interfacesInorganic Materials20051 иқтибос
    ABI

  4. Low-temperature diffusion of lithium in silicon-germanium solid solutions

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov

    МақолаSemiconductor materials and interfacesPhysics of the Solid State20011 иқтибос
    ABI

  5. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 иқтибос
    ABI

  6. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    МақолаSemiconductor materials and interfacesInorganic Materials20080 иқтибос
    ABI