Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers
I. G. AtabaevFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, UzbekistanN. A. MatchanovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, UzbekistanÉ. N. BakhranovFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, UzbekistanM. U. KhazhievFizika-Solntse Research and Production Association, Physicotechnical Institute, Academy of Sciences of Uzbekistan, ul. Mavlyanova 2b, Tashkent, 700084, Uzbekistan
ABI
Аннотация
We have studied the properties of Si1 − x Ge x -based p-i-n structures and Schottky barriers in which the i-region had been produced via compensation with gold. The results demonstrate that the use of a guard ring in p-Si1 − x Ge x 〈Au〉 structures reduces the room-temperature reverse leakage current by two to three orders of magnitude. Such structures have sufficiently small reverse currents and a barrier on the order of 0.75 eV. p-Si1 − x Ge x 〈Au〉-based guard-ring structures are suitable for the fabrication of IR and nuclear detectors.
Мавзулар
Идентификаторлар
Иқтибослар ва манбалар
0 та иқтибос12 та фойдаланилган манба
Кўрсаткичлар — AkademScholar · Тез орада