Silicon Carbide Semiconductor Technologies

107 та иш

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
Jo`shqin Abdullayev, I. B. Sapaev
МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 иқтибос
ABI
Optimization of vertically stacked nanosheet FET immune to self-heating
M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1
МақолаSemiconductor materials and devicesMicro and Nanostructures20235 иқтибос
ABI
Oxide film assisted dopant diffusion in silicon carbide
Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6
МақолаSilicon and Solar Cell TechnologiesThin Solid Films20105 иқтибос
ABI
Nonequilibrium Diffusion of Boron in SiC at Low Temperatures
Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6
МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 иқтибос
ABI
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET
A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4
МақолаAdvancements in Semiconductor Devices and Circuit Design20144 иқтибос
ABI
Influence of Defects on Low Temperature Diffusion of Boron in SiC
I. G. Atabaev, Tojiddin M. Saliev, Dilmurad SAIDOV +5
МақолаSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20114 иқтибос
ABI
Fast Switching 4H-SiC P-i-n Structures Fabricated by Low Temperature Diffusion of Al
I. G. Atabaev, Kh. N. Juraev, V. A. Pak
МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос
ABI
4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates
N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20002 иқтибос
ABI
Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method
N.I. Kuznetsov, D. A. Bauman, A.V. Gavrilin +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос
ABI
Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 иқтибос
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 иқтибос
ABI
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1
МақолаSilicon and Solar Cell TechnologiesMaterials science forum20052 иқтибос
ABI
Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron
I. G. Atabaev, Kh. N. Juraev
МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 иқтибос
ABI
SYNTHESIS OF A SILICON CARBIDE FROM NATURAL RAW MATERIAL IN A SOLAR FURNACE
M. S. Paizullakhanov, L. S. Suvonova, N.N. Cherenda
МақолаChemical and Physical Properties of MaterialsHigh Temperature Material Processes An International Quarterly of High-Technology Plasma Processes20232 иқтибос
ABI
Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4
МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 иқтибос
ABI
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос
ABI
Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers
S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1
МақолаSemiconductor materials and interfacesphysica status solidi (a)19821 иқтибос
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
МақолаSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 иқтибос
ABI
Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 иқтибос
ABI
High Energy Resolution Detectors Based on 4H-SiC
Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5
МақолаParticle Detector Development and PerformanceMaterials science forum20051 иқтибос
ABI
Spectral Dependence of Optical Absorption of 4H-SiC Doped with Boron and Aluminum
I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev
МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос
ABI
Investigation of the formation of defects under fast neutrons and gamma irradiation in 3C–SiC nano powder
M.N. Mirzayev, B. A. Abdurakhimov, E. Demir +14
МақолаMuon and positron interactions and applicationsPhysica B Condensed Matter20211 иқтибос
ABI
Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion
Kh. N. Juraev, M. U. Hajiev, А. Кутлимратов +2
МақолаSilicon Carbide Semiconductor TechnologiesMaterials Science20241 иқтибос
ABI

Silicon Carbide Semiconductor Technologies

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

Optimization of vertically stacked nanosheet FET immune to self-heating

Oxide film assisted dopant diffusion in silicon carbide

Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

Influence of Defects on Low Temperature Diffusion of Boron in SiC

Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Electrical Characteristics of 4H-SiC pn Diode Grown by LPE Method

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

SYNTHESIS OF A SILICON CARBIDE FROM NATURAL RAW MATERIAL IN A SOLAR FURNACE

Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

High Energy Resolution Detectors Based on 4H-SiC

Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

Investigation of the formation of defects under fast neutrons and gamma irradiation in 3C–SiC nano powder

Current Transport Mechanisms and Electrophysical Characteristics of the 4H-SiC p-n Junctions Formed by Aluminum Diffusion