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Alexey N. Kuznetsov

9 та иш

Russian Academy of Sciences

  1. Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

    A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 иқтибос
    ABI

  2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 иқтибос
    ABI

  3. Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

    Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 иқтибос
    ABI

  4. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 иқтибос
    ABI

  5. Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

    A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос
    ABI

  6. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

    A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 иқтибос
    ABI

  7. Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

    A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
    ABI

  8. 6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

    Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6

    МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос
    ABI

  9. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

    A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

    МақолаGaN-based semiconductor devices and materialsMaterials science forum20060 иқтибос
    ABI