Anatoly M. Strel’chuk

25 та иш

A.F. Ioffe Physicotechnical Institute RAS

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 иқтибос
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 иқтибос
ABI
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures
Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1
МақолаSilicon and Solar Cell TechnologiesMaterials science forum20052 иқтибос
ABI
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices
Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 иқтибос
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
МақолаSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 иқтибос
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 иқтибос
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 иқтибос
ABI
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk
МақолаSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum19930 иқтибос
ABI
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос
ABI
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 иқтибос
ABI
Radiation Hardness of Silicon Carbide
A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
ABI
Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions
Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
ABI
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
ABI
Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers
Evgenia V. Kalinina, G. Kholuyanov, Anatoly M. Strel’chuk +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
ABI
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
ABI
Influence of Irradiation on Excess Currents in SiC pn Structures
Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
ABI
6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6
МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос
ABI
Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions
Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +6
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
ABI
About the Nature of Recombination Current in 4H-SiC pn Structures
Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос
ABI
Radiation Hard Devices Based on SiC
Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос
ABI
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6
МақолаGaN-based semiconductor devices and materialsMaterials science forum20060 иқтибос
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 иқтибос
ABI
Recombination Processes in 4H-SiC pn Structures
Anatoly M. Strel’chuk, Baptiste Bérenguier, E. B. Yakimov +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20160 иқтибос
ABI
Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n+p 4H-SiC Structures
Anatoly M. Strel’chuk, A. E. Kalyadin, A. А. Lebedev +3
МақолаSemiconductor materials and devicesMaterials science forum20180 иқтибос
ABI

Anatoly M. Strel’chuk

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

Radiation Hardness of Silicon Carbide

Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

Influence of Irradiation on Excess Currents in SiC pn Structures

6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

About the Nature of Recombination Current in 4H-SiC pn Structures

Radiation Hard Devices Based on SiC

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

Recombination Processes in 4H-SiC pn Structures

Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n<sup>+</sup>p 4H-SiC Structures