Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chukA.F. Ioffe Physicotechnical Institute RASA. А. LebedevRussian Academy of SciencesD. V. DavydovRussian Academy of SciencesN.S. SavkinaRussian Academy of SciencesAlexey N. KuznetsovRussian Academy of SciencesM. Ya. ValakhV. Lashkaryov Institute of SemiconductorV.S. KiselevNational Academy of Sciences of UkraineB. RomanyukChristophe RaynaudUniversity of LyonJean-Pierre ChanteINSA LyonMarie Laure LocatelliUniversité Paul Sabatier
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