A. А. Lebedev

26 та иш

Russian Academy of Sciences

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region
A. А. Lebedev, Anatoly M. Strel’chuk, N.S. Savkina +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20032 иқтибос
ABI
High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate
Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 иқтибос
ABI
Doping of n-type 6H–SiC and 4H–SiC with defects created with a proton beam
A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3
МақолаSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 иқтибос
ABI
Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation
N.S. Savkina, Anatoly M. Strel’chuk, L. M. Sorokin +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос
ABI
Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation
Anatoly M. Strel’chuk, A. А. Lebedev, D. V. Davydov +8
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20041 иқтибос
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure
Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 иқтибос
ABI
Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres
M. M. Anikin, A. А. Lebedev, Anatoly M. Strel’chuk
МақолаSilicon Carbide Semiconductor TechnologiesDefect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum19930 иқтибос
ABI
Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation
A. А. Lebedev, D. V. Davydov, Anatoly M. Strel’chuk +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20000 иқтибос
ABI
Growth of SiC and GaN on Porous Buffer Layers
M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12
МақолаGaN-based semiconductor devices and materialsMaterials science forum20000 иқтибос
ABI
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization
A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 иқтибос
ABI
Radiation Hardness of Silicon Carbide
A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
ABI
p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation
Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
ABI
X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface
T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
ABI
Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
A. А. Lebedev, Anatoly M. Strel’chuk, Alexey N. Kuznetsov +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
ABI
Modification of the Silicon Carbide by Proton Irradiation
Е. В. Богданова, Vitalii V. Kozlovski, D. S. Rumyantsev +2
МақолаSilicon and Solar Cell TechnologiesMaterials science forum20040 иқтибос
ABI
On Current Limitations in Porous SiC Applications
M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3
МақолаSilicon Nanostructures and PhotoluminescenceMaterials science forum20050 иқтибос
ABI
Influence of Irradiation on Excess Currents in SiC pn Structures
Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20050 иқтибос
ABI
6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy
Anatoly M. Strel’chuk, A. А. Lebedev, A. E. Cherenkov +6
МақолаSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос
ABI
About the Nature of Recombination Current in 4H-SiC pn Structures
Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос
ABI
Radiation Hard Devices Based on SiC
Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос
ABI
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6
МақолаGaN-based semiconductor devices and materialsMaterials science forum20060 иқтибос
ABI
Carrier Removal in Electron Irradiated 4H and 6H SiC
M. Mikelsen, Ulrike Großner, J. H. Bleka +6
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20080 иқтибос
ABI
4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C
Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 иқтибос
ABI
Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions
Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 иқтибос
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev
МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 иқтибос
ABI

A. А. Lebedev

Investigation of p-3C-SiC/n+-6H-SiC Heterojunctions with Low Doped p-3C-SiC Region

High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

Characterization of 3C-SiC/6H-SiC Heterostructures Grown by Vacuum Sublimation

Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

Radiative and Radiationless Recombination Processes in 6H and 4H SiC Diodes and the Effect of Deep Centres

Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation

Growth of SiC and GaN on Porous Buffer Layers

p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

Radiation Hardness of Silicon Carbide

p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum

Modification of the Silicon Carbide by Proton Irradiation

On Current Limitations in Porous SiC Applications

Influence of Irradiation on Excess Currents in SiC pn Structures

6H(n<sup>+</sup>)/3C(n)/6H(p<sup>+</sup>) - SiC Structures Grown by Sublimation Epitaxy

About the Nature of Recombination Current in 4H-SiC pn Structures

Radiation Hard Devices Based on SiC

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Carrier Removal in Electron Irradiated 4H and 6H SiC

4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure