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T. S. Argunova

9 та иш

Ioffe Physicotechnical Institute RAS

  1. Distribution of Defects in InAs<sub>1-x-y</sub>Sb<sub>x</sub>P<sub>y</sub>-InAs DHs

    T. S. Argunova, R. N. Kyutt, B. A. Matveev +3

    МақолаAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 иқтибос
    ABI

  2. Nature of Defects in MOCVD Grown GaAlAs-GaAs QW DHs

    B. Yavich, I. N. Kochnev, P. P. Buinov +4

    МақолаSemiconductor materials and devicesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 иқтибос
    ABI

  3. X-Ray Diffractometry and Topography of CdHgTe Bulk Crystals and CdHgTe-CdTe Epitaxial Structures

    В. В. Ратников, T. S. Argunova, K.E. Mironov +1

    МақолаAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 иқтибос
    ABI

  4. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

    R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

    МақолаAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19930 иқтибос
    ABI

  5. Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

    I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2

    Мақола3D IC and TSV technologiesMaterials science forum19950 иқтибос
    ABI

  6. Structural and Electrical Quality of Silicon Bicrystals Fabricated by a Modified Direct Bonding Technique

    T. S. Argunova, M. Yu. Gutkin, L. S. Kostina +3

    МақолаThin-Film Transistor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19990 иқтибос
    ABI

  7. X-Ray Imaging and TEM Study of Micropipes Related to their Propagation through Porous SiC Layer/SiC Epilayer Interface

    T. S. Argunova, M. Yu. Gutkin, Jung Ho Je +5

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20040 иқтибос
    ABI

  8. Structural Transformation of Dislocated Micropipes in Silicon Carbide

    M. Yu. Gutkin, A. G. Sheĭnerman, T. S. Argunova +4

    МақолаAdvanced Surface Polishing TechniquesMaterials science forum20040 иқтибос
    ABI

  9. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

    I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20080 иқтибос
    ABI