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R. N. Kyutt

5 та иш

A. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. Petersburg

  1. Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

    D. P. Bhattacharyya, D. A. Vinokurov, G.M. Gusinskii +6

    МақолаIon-surface interactions and analysisTechnical Physics Letters19981 иқтибос
    ABI

  2. Distribution of Defects in InAs<sub>1-x-y</sub>Sb<sub>x</sub>P<sub>y</sub>-InAs DHs

    T. S. Argunova, R. N. Kyutt, B. A. Matveev +3

    МақолаAdvanced Semiconductor Detectors and MaterialsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19910 иқтибос
    ABI

  3. New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

    R. N. Kyutt, J. Heydenreich, S. Ruvimov +5

    МақолаAdvanced ceramic materials synthesisDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19930 иқтибос
    ABI

  4. Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Kudryavtsev +8

    МақолаSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 иқтибос
    ABI

  5. Defect Engineering in Si: Ho Light-Emitting Structure Technology

    Н. А. Соболев, A. M. Emel’yanov, R. N. Kyutt +1

    МақолаSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19990 иқтибос
    ABI