D. A. Vinokurov

4 та иш

A. F. IoffePhysicotechnical Institute, Russian Academy of Sciences, St. Petersburg

1. Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

   D. P. Bhattacharyya, D. A. Vinokurov, G.M. Gusinskii +6

   МақолаIon-surface interactions and analysisTechnical Physics Letters19981 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452985

2. Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

   D. A. Vinokurov, V. A. Kapitonov, O. V. Kovalenkov +2

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000033

3. Investigation of strained InxGa1−xAs/InP quantum wells fabricated by metalorganic compound hydride epitaxy

   A. D. Bondarev, D. A. Vinokurov, V. A. Kapitonov +3

   МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000135

4. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

   И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

   Мақолаsolar cell performance optimizationSemiconductors20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000306