Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

Results are presented of investigations of the growth of self-organizing nanosize InP and InAsP clusters in an In0.5Ga0.5P matrix. The structure was characterized by low-temperature photoluminescence and transmission electron microscopy. The photoluminescence measurements revealed highly efficient radiative recombination from the quantum dots and indicated that the structures were of good optical quality. The average density and size of the InP clusters, determined from the results of the transmission electron microscope measurements, are 3×109 cm−2 and 80 nm, respectively.

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