M. G. Mynbaeva

3 та иш

Russian Academy of Sciences

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   МақолаGaN-based semiconductor devices and materialsMaterials science forum20000 иқтибос

   ABIABI:AkademIndex/openalex/2000.article.000163

2. Porous SiC: New Applications through In- and Out- Dopant Diffusion

   M. G. Mynbaeva, N.I. Kuznetsov, A. A. Lavrent’ev +7

   МақолаSemiconductor materials and devicesMaterials science forum20030 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000245

3. On Current Limitations in Porous SiC Applications

   M. G. Mynbaeva, A. A. Lavrent’ev, I. S. Kotousova +3

   МақолаSilicon Nanostructures and PhotoluminescenceMaterials science forum20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000114