GaN-based semiconductor devices and materials

71 та иш

The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium
M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2
МақолаSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20254 иқтибос
ABI
Changing the Voltage of the p-n Junction in a Magnetic Field
G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova
МақолаSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20232 иқтибос
ABI
Distribution of impurities in base-depleted region of diode temperature sensor
R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5
МақолаChalcogenide Semiconductor Thin FilmsLow Temperature Physics20242 иқтибос
ABI
The effect of a heated electron on the VAX of a tunnel diode
G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1
МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20232 иқтибос
ABI
The influence of heating on the characteristics of the electron-excited conduction in gallium phosphide films
S. A. Azimov, D. A. Aronov, V. M. Rubinov +1
МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (a)19831 иқтибос
ABI
Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates
Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5
МақолаGaN-based semiconductor devices and materialsJournal of Applied Physics20001 иқтибос
ABI
Electrical and Optical Properties of ZnO Films Grown on GaAs Substrates
Sh. U. Yuldashev, Г. Н. Панин, Sungwoo Choi +7
МақолаZnO doping and propertiesJapanese Journal of Applied Physics20031 иқтибос
ABI
Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates
V. V. Mamutin, V. P. Ulin, V. V. Tret’yakov +3
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19991 иқтибос
ABI
Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B
Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2
МақолаGaN-based semiconductor devices and materialsRussian Physics Journal19880 иқтибос
ABI
UHF generation in sub-micron layers of GaAs
G. F. Karavaev, Е. А. Ткаченко, E. V. Uimanov
МақолаSemiconductor Quantum Structures and DevicesRussian Physics Journal19890 иқтибос
ABI
Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN
V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7
МақолаGaN-based semiconductor devices and materialsMaterials science forum19970 иқтибос
ABI
Characteristics of stimulated emission from an optically pumped GaN/AlGaN double heterostructure
М. В. Максимов, A. V. Sakharov, W. V. Lundin +7
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19970 иқтибос
ABI
Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling
А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5
МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос
ABI
High-temperature diode formed by epitaxial GaP layers
M. M. Sobolev, В. Г. Никитин
МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
ABI
HVPE GaN and AIGaN 'Substrates' for Homoepitaxy
Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5
МақолаGaN-based semiconductor devices and materialsMaterials science forum19980 иқтибос
ABI
GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh +7
МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
ABI
Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
W. V. Lundin, A. S. Usikov, B. V. Pushnyĭ +11
МақолаGaN-based semiconductor devices and materialsMaterials science forum19980 иқтибос
ABI
On the epitaxy of aluminum nitride on silicon substrates in a chloride-hydride process
A. N. Efimov, Andrew O. Lebedev, A. Tsaregorodtsev
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос
ABI
Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge
V. V. Mamutin, В. Н. Жмерик, T. V. Shubina +5
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос
ABI
Electrical and Optical Properties of Highly Strained GaN Epilayers
A. S. Usikov, W. V. Lundin, B. V. Pushnyĭ +8
МақолаGaN-based semiconductor devices and materialsMaterials science forum19980 иқтибос
ABI
Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties
J. Holst, M. Straßburg, N. N. Ledentsov +13
МақолаGaN-based semiconductor devices and materialsMaterials science forum19980 иқтибос
ABI
Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy
С. И. Степанов, D. Tsvetkov, A. E. Cherenkov
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос
ABI
Photoluminescence of n-GaN: Influence of chemical treatment of the surface using sulfide solutions
Yu. V. Zhilyaev, M. E. Kompan, E. V. Konenkova +2
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19980 иқтибос
ABI
Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
A. V. Sakharov, W. V. Lundin, V. A. Semenov +4
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19990 иқтибос
ABI
Photoinduced self-organization of gallium nanowires on a GaN surface
D. A. Bedarev, S. O. Kognovitskiĭ, W. V. Lundin
МақолаGaN-based semiconductor devices and materialsTechnical Physics Letters19990 иқтибос
ABI