Abror Abdaminov

4 та иш

Institute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek District, 100214 Tashkent, Uzbekistan

1. The study of structure, electrophysical, physicomechanical and optical properties of GaAs with oxygen impurities and doped chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   МақолаSemiconductor Quantum Structures and DevicesPhysica B Condensed Matter20254 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.000898

2. Influence of gamma doses on the optical and electrical properties of oxygen-impurity and chromium-doped GaAs

   M. Yu. Tashmetov, Abror Abdaminov

   МақолаSemiconductor Quantum Structures and DevicesJournal of Physics Condensed Matter20251 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.002520

3. The Study of Structure, Electrophysical, Physicomechanical and Optical Properties of Gaas with Oxygen Impurities and Doped Chromium

   M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

   ПрепринтGaN-based semiconductor devices and materialsSSRN Electronic Journal20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.preprint.000087

4. Comprehensive study of GaAs(O):Cr after gamma irradiation: x-ray analysis, surface morphology, and microhardness properties

   M Yu Tashmetov, Abror Abdaminov

   МақолаRadiation Effects in ElectronicsPhysica Scripta20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.017583