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GaN-based semiconductor devices and materials

71 та иш

  1. Energy and Temperature Dependence of the Secondary Ion Emission of GaN/SiC Clusters under Cesium-Ion Bombardment

    Б.Г. Атабаев, R. Djabbarganov, M. Kh. Akhmadjanova +1

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20210 иқтибос
    ABI

  2. RETRACTED: Investigation of crotonaldehyde adsorption on pure and Pd-decorated GaN nanotubes: A density functional theory study

    Saade Abdalkareem Jasim, Maria Jade Catalan Opulencia, Ali Majdi +4

    МақолаGas Sensing Nanomaterials and SensorsSolid State Communications20220 иқтибос
    ABI

  3. Self-Nucleated Nonpolar GaN Nanowires with Strong and Enhanced UV Luminescence

    Baodan Liu, Qingyun Liu, Wenjin Yang +4

    МақолаGaN-based semiconductor devices and materialsCrystal Growth & Design20220 иқтибос
    ABI

  4. Extremely high frequency Schottky diodes based on single GaN nanowires

    K Yu Shugurov, А М Можаров, Vladimir V. Fedorov +3

    МақолаGaN-based semiconductor devices and materialsNanotechnology20230 иқтибос
    ABI

  5. Retraction notice to “Investigation of crotonaldehyde adsorption on pure and Pd-decorated GaN nanotubes: A density functional theory study” [Solid State Commun. 348–349, (2022) 114741]

    Saade Abdalkareem Jasim, Maria Jade Catalan Opulencia, Ali Majdi +4

    МақолаGaN-based semiconductor devices and materialsSolid State Communications20230 иқтибос
    ABI

  6. Formation and Properties of ITO Films Produced on Silicon for Applications in Solar Cells

    А. С. Саидов, А. Кутлимратов, R. R. Kabulov +3

    МақолаZnO doping and properties20230 иқтибос
    ABI

  7. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square20230 иқтибос
    ABI

  8. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

    D. V. Saparov

    МақолаZnO doping and propertiesJournal of Crystal Growth20240 иқтибос
    ABI

  9. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20240 иқтибос
    ABI

  10. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

    Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

    МақолаSemiconductor materials and interfacesPhysica B Condensed Matter20250 иқтибос
    ABI

  11. Controlling dislocation clusters in selective area growth of gallium nitride with hexagonal configurations of serpentine channel mask

    Muhammad Saddique Akbar Khan, Yu Guo, Pervaiz Ahmad +4

    МақолаGaN-based semiconductor devices and materialsMicro and Nanostructures20250 иқтибос
    ABI

  12. Design of Class AB Power Amplifier to Enhance Detection Range of S-band Radar Module Using GaN HEMT

    Muhammad Farhan Shahid, Sohaib Yaqoob Chaudhry, Valisher Sapayev Odilbek +3

    МақолаAdvanced Power Amplifier Design20250 иқтибос
    ABI

  13. Investigation of corrosion rate in inhibitor and no-inhibitor environment by polarization resistance and gravimetric method

    Erali Panoev, Gayrat Bozorov

    МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20250 иқтибос
    ABI

  14. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    МақолаGaN-based semiconductor devices and materialsActa Physica Polonica A20250 иқтибос
    ABI

  15. Advancements in Wide Bandgap Semiconductors for High-Power and High-Frequency Applications

    Amrutha Sampath, Sudhanshu Maurya, Snehlata Wankhade +3

    МақолаGa2O3 and related materials20250 иқтибос
    ABI

  16. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

    A.I.Mamadjanov, H.Olimxonova

    МақолаGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)20250 иқтибос
    ABI

  17. MODELING OF STRAIN-INDUCED EFFECTS ON GAN PN JUNCTIONS USING SILVACO ATLAS

    A.I.Mamadjanov, H.Olimxonova

    МақолаGaN-based semiconductor devices and materialsZenodo (CERN European Organization for Nuclear Research)20250 иқтибос
    ABI

  18. Modeling Advanced Electronic Device Characterization Using a Unified Physics-Informed Machine Learning Framework

    Elsayed Ebrahim E., Hayal Mohammed R, Juraev Davron Aslonqulovich +1

    МақолаAdvancements in Semiconductor Devices and Circuit Design20250 иқтибос
    ABI

  19. The Study of Structure, Electrophysical, Physicomechanical and Optical Properties of Gaas with Oxygen Impurities and Doped Chromium

    M. Yu. Tashmetov, Abror Abdaminov, Khabibulla Djangabaev +2

    ПрепринтGaN-based semiconductor devices and materialsSSRN Electronic Journal20250 иқтибос
    ABI

  20. Chemical analysis of ion traces in the betta Ga2O3 structure and fundamentals of molecular dynamics of mobilization hydrogen and helium molecules

    A.S. Nygymanova, G. Yergaliuly, Bakytbek Mauyey +9

    МақолаGa2O3 and related materialsResults in Materials20260 иқтибос
    ABI

  21. Numerical analysis of femtosecond second-harmonic generation in periodically poled GaN crystals

    О.И. Сабиров, А.С. Аширов, U. K. Sapaev

    МақолаNonlinear Photonic SystemsJournal of Russian Laser Research20260 иқтибос
    ABI