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N. N. Ledentsov

11 та иш

A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,

  1. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement

    A. V. Sakharov, S. V. Ivanov, S. V. Sorokin +4

    МақолаStrong Light-Matter InteractionsTechnical Physics Letters19970 иқтибос
    ABI

  2. Quantum-dot cw heterojunction injection laser operating at room temperature with an output power of 1 W

    Yu. M. Shernyakov, A. Yu. Egorov, A. E. Zhukov +12

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос
    ABI

  3. Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy

    G. É. Cirlin, V. N. Petrov, S. A. Masalov +2

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 иқтибос
    ABI

  4. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm

    V. M. Ustinov, A. R. Kovsh, A. E. Zhukov +9

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  5. Fabrication of InAs quantum dots on silicon

    G. É. Cirlin, V. N. Petrov, В. Г. Дубровский +6

    МақолаSurface and Thin Film PhenomenaTechnical Physics Letters19980 иқтибос
    ABI

  6. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region

    Yu. M. Shernyakov, A. Yu. Egorov, B. V. Volovik +11

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  7. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement

    B. V. Volovik, A. F. Tsatsul’nikov, N. N. Ledentsov +11

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  8. Spontaneous long-wavelength interlevel emission in quantum-dot laser structures

    L. E. Vorob’ev, D. A. Firsov, V. A. Shalygin +11

    МақолаSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 иқтибос
    ABI

  9. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures: Correlation with Structural Properties

    J. Holst, M. Straßburg, N. N. Ledentsov +13

    МақолаGaN-based semiconductor devices and materialsMaterials science forum19980 иқтибос
    ABI

  10. Excitonic waveguiding and lasing in wide bandgap semiconductor

    N. N. Ledentsov

    МақолаSemiconductor Quantum Structures and DevicesPhysics of the Solid State19980 иқтибос
    ABI

  11. Spontaneous Interlevel Emission from Quantum Dot and Quantum Well Laser Structures

    L. E. Vorobjev, D. A. Firsov, V. A. Shalygin +11

    МақолаLaser-Matter Interactions and ApplicationsMaterials science forum19980 иқтибос
    ABI