M. G. Dadamirzayev

4 та иш

Namangan engineering – construction institute, Islam Karimov avenue, 12, Namangan, Uzbekistan

1. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

   G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

   МақолаSilicon and Solar Cell TechnologiesAIP conference proceedings20235 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.338275

2. The effect of a heated electron on the VAX of a tunnel diode

   G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1

   МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20232 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.385121

3. Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

   M. G. Dadamirzayev

   МақолаGyrotron and Vacuum Electronics ResearchSemiconductors20112 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.538743

4. INFLUENCE OF REFLECTION OF PHOTOELECTRONS FROM THE SURFACE PHOTO-EMF IN THIN SEMICONDUCTOR FILMS AND COMPARE IT WITH THE BULK PHOTO-EMF

   G. Gulyams, M. G. Dadamirzayev, N. Yu. Sharibaev

   МақолаAdvanced MEMS and NEMS TechnologiesAlternative Energy and Ecology (ISJAEE)20160 иқтибос

   ABIABI:AkademIndex/openalex/2016.article.000305