L. G. Lavrent’eva

4 та иш

V. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk

1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

   L. G. Lavrent’eva

   Мақолаnanoparticles nucleation surface interactionsRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000078

2. Influence of supersaturation on the growth of gallium arsenide films in chloride gas-transport systems

   L. G. Lavrent’eva, V. A. Moskovkin, И. В. Ивонин

   МақолаOptical Coatings and GratingsRussian Physics Journal19810 иқтибос

   ABIABI:AkademIndex/openalex/1981.article.000119

3. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

   Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

   МақолаGaN-based semiconductor devices and materialsRussian Physics Journal19880 иқтибос

   ABIABI:AkademIndex/openalex/1988.article.000113

4. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

   И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

   МақолаSemiconductor materials and interfacesRussian Physics Journal19920 иқтибос

   ABIABI:AkademIndex/openalex/1992.article.000151