Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B
Г. А. АлександроваV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskИ. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskL. G. Lavrent’evaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskP. B. PashchenkoV. D. Kuznetsov Siberian Physicotechnical Institute, State University, TomskM. V. ChekanovaV. D. Kuznetsov Siberian Physicotechnical Institute, State University, Tomsk
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