Г. А. Александрова

2 та иш

V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk

1. Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief

   Г. А. Александрова, И. В. Ивонин, L. M. Krasil'nikova +3

   МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 иқтибос

   ABIABI:AkademIndex/openalex/1980.article.000113

2. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

   Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

   МақолаGaN-based semiconductor devices and materialsRussian Physics Journal19880 иқтибос

   ABIABI:AkademIndex/openalex/1988.article.000113