Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide
И. В. ИвонинV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskN. N. KrivolapovV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskL. G. Lavrent’evaV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, TomskL. P. PorokhovnichenkoV. D. Kuznetsov Siberian Physicotechnical Scientific-Research Institute at the State University, Tomsk
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