L. P. Porokhovnichenko

2 та иш

Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, Tomsk

1. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

   I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

   МақолаSemiconductor materials and interfacesRussian Physics Journal19900 иқтибос

   ABIABI:AkademIndex/openalex/1990.article.000080

2. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

   И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

   МақолаSemiconductor materials and interfacesRussian Physics Journal19920 иқтибос

   ABIABI:AkademIndex/openalex/1992.article.000151