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physica status solidi (a)

153 та иш

Журнал · ISSN 0031-8965

  1. Subthreshold defect production in silicon

    Marat S. Yunusov, M. A. Zaikovskaya, Б. Л. Оксенгендлер +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)197610 иқтибос
    ABI

  2. The Faraday Effect of Rare-Earth Ions in Garnets

    K. M. Mukimov, B. Yu. Sokolov, U. V. Valiev

    МақолаMagneto-Optical Properties and Applicationsphysica status solidi (a)19908 иқтибос
    ABI

  3. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19878 иқтибос
    ABI

  4. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19847 иқтибос
    ABI

  5. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19947 иқтибос
    ABI

  6. Specific heat and phase transition in [Ni(NH3)6] (BF4)2

    T. Grzybek, J.A. Janik, Joachim Mayer +3

    МақолаSolid-state spectroscopy and crystallographyphysica status solidi (a)19736 иқтибос
    ABI

  7. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19766 иқтибос
    ABI

  8. Specific heat of solid [Ni (NH3)6] (ClO4)2 in the temperature range from 115 to 300 K

    M. Rachwalska, J.M. Janik, J.A. Janik +2

    МақолаChemical Thermodynamics and Molecular Structurephysica status solidi (a)19755 иқтибос
    ABI

  9. Radiation-Induced Defect Formation in Silica Glasses

    R. R. Gulamova, É. M. Gasanov, E. V. Sazonova

    МақолаGlass properties and applicationsphysica status solidi (a)19935 иқтибос
    ABI

  10. Positron and positronium states in semiconductors irradiated by supercurrent beams of charged particles

    A. D. Pogrebnyak

    МақолаMuon and positron interactions and applicationsphysica status solidi (a)19845 иқтибос
    ABI

  11. Positron Annihilation and Profiles of Radiation Damages in GaAs and Si Crystals Irradiated by Supercurrent Proton or Electron Beams

    A. D. Pogrebnyak, E. Yu. Boyarko, Yu. Yu. Kryuchkov +1

    МақолаMuon and positron interactions and applicationsphysica status solidi (a)19845 иқтибос
    ABI

  12. On the theory of carrier exclusion in “pure” intrinsic semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19815 иқтибос
    ABI

  13. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

    D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19884 иқтибос
    ABI

  14. Energy band diagrams, of Cu2SZnXCd1−xS(0 ≦ x ≦ 1) heterojunctions

    T.M. Razykov, B. Kh. Kadirov

    МақолаSemiconductor materials and interfacesphysica status solidi (a)19844 иқтибос
    ABI

  15. Reactor irradiation enhanced hetero-diffusion in silicon

    A. I. Koifman, O. R. Niyazova

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19723 иқтибос
    ABI

  16. The X-ray powder investigation of phase transitions in [Ni(NH3)6] (ClO4)2

    S. Hodorowicz, M. Ciechanowicz‐Rutkowska, J.M. Janik +1

    МақолаChemical Thermodynamics and Molecular Structurephysica status solidi (a)19773 иқтибос
    ABI

  17. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  18. Influence of ultrasound on ionic diffusion process in semiconductors

    В. Д. Кревчик, Р. А. Муминов, A.Ya. Yafasov

    МақолаSolidification and crystal growth phenomenaphysica status solidi (a)19813 иқтибос
    ABI

  19. Energy Band Models of n-Znx Cd1-xS−p-CdTe and n-ZnxCd1−xS−p-Si (0 ≦ × ≦ 1) Heterojunctions

    T.M. Razykov, B. Kh. Kadyrov, M. A. Khodyaeva

    МақолаChalcogenide Semiconductor Thin Filmsphysica status solidi (a)19853 иқтибос
    ABI

  20. Mechanism of a superion phase transition in α-LiIO3

    Ali E. Aliev, A. Sh. Akramov, L. N. Fershtat +1

    МақолаSolid-state spectroscopy and crystallographyphysica status solidi (a)19883 иқтибос
    ABI

  21. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  22. Positron Annihilation at Defects in Surface Layers of Steel Irradiated by Supercurrent Ion Beams

    A. N. Didenko, O Asainov, В. П. Кривобоков +5

    МақолаIon-surface interactions and analysisphysica status solidi (a)19853 иқтибос
    ABI

  23. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 иқтибос
    ABI

  24. The Mössbauer Effect in the Pacific Ocean Fe-Mn Nodules

    Α.Z. Hrynkiewicz, Barbara Sawicka, J. Sawicki

    МақолаMarine and coastal ecosystemsphysica status solidi (a)19702 иқтибос
    ABI

  25. Interstitial mechanism of the low-temperature gold migration in silicon

    M. A. Kaneev, A. I. Koifman, O. R. Niyazova

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19732 иқтибос
    ABI