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A. I. Koifman

6 та иш

Institute of Nuclear Physics, Tashkent

  1. Reactor irradiation enhanced hetero-diffusion in silicon

    A. I. Koifman, O. R. Niyazova

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19723 иқтибос
    ABI

  2. Interstitial mechanism of the low-temperature gold migration in silicon

    M. A. Kaneev, A. I. Koifman, O. R. Niyazova

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19732 иқтибос
    ABI

  3. Influence of structure defects on the radiation enhanced gold diffusion in silicon

    A. I. Koifman, N. Narkulov, Marat S. Yunusov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19751 иқтибос
    ABI

  4. The low-temperature doping of silicon by radiation-induced diffusion

    A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19760 иқтибос
    ABI

  5. Investigation of the effect of large doses on the Si(Li) detector parameters

    A. I. Koifman, Р. А. Муминов, A.Ya. Yafasov

    МақолаRadiation Detection and Scintillator Technologiesphysica status solidi (a)19820 иқтибос
    ABI

  6. Influence of small radiation doses on the parameters of injection lasers

    A. V. Khaydarov, A. I. Koifman, I. V. Mart’yanova

    МақолаLaser Material Processing Techniques19950 иқтибос
    ABI