A. N. Narkulov

1 та иш

Institute of Nuclear Physics, Tashkent

1. The low-temperature doping of silicon by radiation-induced diffusion

   A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19760 иқтибос

   ABIABI:AkademIndex/openalex/1976.article.000045