On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

An analysis of double injection currents is made in p—n—n+-diode structures containing deep traps with well defined diffuse distribution of trapping levels within the gap. It is shown that the broad smearing out of trapping states results in the principal changes of the I(V) dependences of double injection as a consequence of the weakening of the injection modulation of the n-base region. [Russian Text Ignored].

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