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Integrated Circuits and Semiconductor Failure Analysis

142 та иш

  1. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201523 иқтибос
    ABI

  2. Features of polyatomic ion emission under sputtering of a silicon single crystal by Au− cluster ions

    Sh.Dj. Akhunov, С. Н. Морозов, У. Х. Расулев

    МақолаIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200313 иқтибос
    ABI

  3. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  4. Thermal spikes observed during the tantalum sputtering by gold cluster ions

    С. Н. Морозов, У. Х. Расулев

    МақолаIon-surface interactions and analysisTechnical Physics Letters200312 иқтибос
    ABI

  5. Comparative study of polyatomic secondary ion emission from silicon with <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si11.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>Au</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math>, <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si12.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>Si</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si13.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>C</mml:mtext></mml:mrow><mml:mrow><mml:mi>m</mml:mi></mml:mrow><mml:mrow><mml:mo>-</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math> projectiles

    С. Н. Морозов, У. Х. Расулев

    МақолаIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200611 иқтибос
    ABI

  6. Investigation of Angular Spectrum of Scattered Inert Gas Ions from the InGaP (001) Surface

    М. K. Kаrimov, Uchkun Kutliev, S.B. Bobojonova +1

    МақолаIon-surface interactions and analysisPhysics and Chemistry of Solid State202110 иқтибос
    ABI

  7. High non-additive sputtering of silicon as large positive cluster ions under polyatomic ion bombardment

    S.F. Belykh, У. Х. Расулев, A.V. Samartsev +2

    МақолаIon-surface interactions and analysisVacuum20009 иқтибос
    ABI

  8. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    МақолаAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 иқтибос
    ABI

  9. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    МақолаIon-surface interactions and analysisTechnical Physics20198 иқтибос
    ABI

  10. Investigation of Defect InP(001) Surface by Low Energy Ion Scаttering Spectroscopy

    М. K. Kаrimov, F.O. Kuryozov, Sh.R. Sadullaev +2

    МақолаIntegrated Circuits and Semiconductor Failure AnalysisMaterials science forum20228 иқтибос
    ABI

  11. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19847 иқтибос
    ABI

  12. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  13. Investigation of the dose dependence of the amorphization of a Si(111) surface bombarded with low-energy Na+ ions

    S. J. Nimatov, Д. С. Руми

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20146 иқтибос
    ABI

  14. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  15. Non-linear effects in Ta sputtering by Au− ions

    С. Н. Морозов, У. Х. Расулев

    МақолаIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms20036 иқтибос
    ABI

  16. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19766 иқтибос
    ABI

  17. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  18. Electron Microscopy and Elemental Composition of the Near-Surface Layer of Electron-Irradiated LiF Crystals

    M. A. Mussaeva, Э. М. Ибрагимова

    МақолаIon-surface interactions and analysisTechnical Physics Letters20195 иқтибос
    ABI

  19. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (b)19685 иқтибос
    ABI

  20. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI

  21. Methods of Determining Reference Signals for One and Multichannel Signatural Analyzer of Microprocessor Systems

    Rustam Хusanovich Djuraev

    МақолаVLSI and Analog Circuit TestingCommunications20184 иқтибос
    ABI

  22. Development of simulation model of smart phase selector device

    E. Khojiakbar, I.Kh. Kholiddinov, Asrorbek Eraliev +2

    МақолаVLSI and Analog Circuit TestingE3S Web of Conferences20234 иқтибос
    ABI

  23. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 иқтибос
    ABI

  24. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    МақолаSemiconductor materials and devicesDoklady Physics20074 иқтибос
    ABI

  25. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI