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Integrated Circuits and Semiconductor Failure Analysis

142 та иш

  1. Effect of coarse-scale surface roughness on transverse electron focusing

    S. A. Korzh

    МақолаElectron and X-Ray Spectroscopy TechniquesSoviet Journal of Low Temperature Physics19810 иқтибос
    ABI

  2. A method for analysis of low energy backscattering spectra

    V. Hnatowicz, J. Kvítek, Lukáš Pelikán +2

    МақолаUltrasonics and Acoustic Wave PropagationNuclear Instruments and Methods in Physics Research19820 иқтибос
    ABI

  3. On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)19820 иқтибос
    ABI

  4. Influence of proton irradiation on the properties of a metal (Au)-anodic oxide-gallium arsenide structure

    С. В. Тихов, В. В. Мартынов, A. N. Kalinin +1

    МақолаSemiconductor materials and interfacesRussian Physics Journal19830 иқтибос
    ABI

  5. Effect of impurities on the residual resistivity of refractory metals

    Β. N. Aleksandrov

    МақолаAdvanced Surface Polishing TechniquesSoviet Journal of Low Temperature Physics19860 иқтибос
    ABI

  6. ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

    Yusuke Mizokawa, Osamu Komoda, Tatsuro Miyasato +3

    МақолаDiamond and Carbon-based Materials ResearchElectronics and Communications in Japan (Part II Electronics)19870 иқтибос
    ABI

  7. Ion-Molecular Epitaxy

    A. Lyutovich

    БобSemiconductor materials and devices19870 иқтибос
    ABI

  8. Radiation defects in Ar+-ion-implanted Hg1?xCdxTe crystals

    A. S. Petrov, В. С. Куликаускас, Yu. V. Lilenko +7

    МақолаAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19880 иқтибос
    ABI

  9. High-frequency properties of point contacts due to nonequilibrium phonon relaxation

    Michael Moskalets

    МақолаForce Microscopy Techniques and ApplicationsSoviet Journal of Low Temperature Physics19890 иқтибос
    ABI

  10. Depth profiles of Sb atoms implanted into Ti

    V. Havránek, V. Hnatowicz, J. Kvítek +3

    МақолаIon-surface interactions and analysisRadiation effects and defects in solids19910 иқтибос
    ABI

  11. Study of ion-bombardment-induced surface topography of silver by stereophotogrammetric method

    I. M. Fayazov, V. N. Sokolov

    МақолаIon-surface interactions and analysisRadiation effects and defects in solids19920 иқтибос
    ABI

  12. High-energy ion implantation in polymer films

    L. Ya. Alimova, I.E. Djamaletdinova, T.S. Pugacheva +1

    МақолаPolymer Nanocomposite Synthesis and IrradiationVacuum19920 иқтибос
    ABI

  13. Influence of the Bremsstrahlung on the radiative induction of charge and interface states in MOS transistors

    A. É. Atamuratov, Kh.S. Daliev, S.Z. Zajnabidinov

    МақолаIntegrated Circuits and Semiconductor Failure AnalysisUzbekiston Fizika Zhurnali19920 иқтибос
    ABI

  14. Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices

    I. V. Grekhov, T. S. Argunova, M. Yu. Gutkin +2

    Мақола3D IC and TSV technologiesMaterials science forum19950 иқтибос
    ABI

  15. The simulation of silicon doping by ion bombardment

    T.S. Pugacheva, F.G. Dzhurabekova, S.A. Lem

    МақолаIon-surface interactions and analysis19950 иқтибос
    ABI

  16. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    МақолаSemiconductor materials and devicesTechnical Physics19970 иқтибос
    ABI

  17. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 иқтибос
    ABI

  18. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

    Zokirkhon M. Khakimov

    МақолаSilicon and Solar Cell TechnologiesMRS Proceedings19980 иқтибос
    ABI

  19. Applications of Ion Beam Methods in Silicide/Si and Silicide/GaAs Nanometre Structures

    Yanwen Zhang

    ДиссертацияIon-surface interactions and analysisLund University Publications (Lund University)19980 иқтибос
    ABI

  20. Ion-induced sputtering of a metal in the form of large clusters

    V. I. Matveev, S.F. Belykh, I. V. Berevkin

    МақолаIon-surface interactions and analysisTechnical Physics19990 иқтибос
    ABI

  21. Regular relief on a silicon surface as a structural defect getter

    L. S. Berman, I. V. Grekhov, L. S. Kostina +3

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters19990 иқтибос
    ABI

  22. Capacitance transient spectroscopy of radiation defects on Si-SiO 2 interface of silicon mis-structures

    Kh.Sh. Daliev, Sharifa B. Utamuradova, A.J. Akbarov

    МақолаSilicon and Solar Cell Technologies19990 иқтибос
    ABI

  23. Low and High Energy Ion Beams in Nanotechnology

    Thomas Winzell

    ДиссертацияIon-surface interactions and analysisLund University Publications (Lund University)20000 иқтибос
    ABI

  24. Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

    Evgenia V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

    МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 иқтибос
    ABI

  25. Computer simulation of ion implantation with visual observation of the implantation profiles

    Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1

    МақолаIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)20030 иқтибос
    ABI